Dibarium Magnesium Diphosphate Yellow Phosphor Applied in InGaN-based LEDs

摘要

An efficient yellow-emitting phosphor,Eu2+ -doped Ba2Mg(PO4)2,is reported.Its excitation band is extending from 250 to 450 nm,which is adaptable to the emission band of near-UV LED chips(350-420 nm).Upon 367-nm light excitation,the phosphor exhibits a strong yellow emission centered at 576 nm.A bright yellow LED was fabricated by incorporating the phosphor with an InGaN-based NUV chip.All the characteristics suggest that Ba2Mg(PO4)2:Eu2+ is a good yellow phosphor candidate for creating white light in phosphor converted white LEDs.