首页> 外文期刊>The European physical journal. Applied physics >Photovoltaic performance improvement in planar P3HT/CdS solar cells induced by structural, optical and electrical property modification in thermal annealed P3HT thin films
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Photovoltaic performance improvement in planar P3HT/CdS solar cells induced by structural, optical and electrical property modification in thermal annealed P3HT thin films

机译:通过热退火P3HT薄膜的结构,光学和电学性质改变,导致平面P3HT / CdS太阳能电池的光伏性能提高

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Bilayer hybrid solar cells were prepared by solution deposition of CdS thin films on conductive glass substrates (ITO), followed by spin-coating or drop-casting poly (3-hexylthiophene) (P3HT) solution on a CdS surface. After a slow drying process, the P3HT films of different thicknesses (from 100 to 725 nm) were annealed at temperatures (T1) from 110 to 190 C, called pre-metal contact annealing. Then carbon paint was collocated on top of P3HT and gold was evaporated. The whole structure was annealed for the second time, called post-metal contact annealing, at temperature (T2) between 110 and 190 C. The continuous increase of the (1 0 0) crystalline plane and the optical absorption coefficient of P3HT films with annealing temperatures indicates the improvement of molecular order inside the polymer films induced by the thermal annealing process. The better ordered P3HT films lead to lower series resistance and higher fill factor in the corresponding solar cells, suggesting the enlargement of charge carrier mobility in annealed P3HT films. On the other hand, the photovoltaic performance is also affected by T2 temperature; a low T2 improves the ohmic contact between P3HT and the metal contact to benefit the charge carrier extraction, whereas a high T2 may deteriorate that union. The same observation was obtained in CdS/P3HT solar cells with P3HT films of different thicknesses. The best energy conversion efficiency of 0.44% was obtained in CdS/P3HT cells with 305 nm thick P3HT annealed at T1 &oot; 190 C and T2 &oot; 110 C for 10 min each.
机译:通过将CdS薄膜溶液沉积在导电玻璃基板(ITO)上,然后在CdS表面上旋涂或滴铸聚(3-己基噻吩)(P3HT)溶液来制备双层混合太阳能电池。经过缓慢干燥过程之后,将不同厚度(从100到725 nm)的P3HT薄膜在110到190℃的温度(T1)进行退火,这称为金属前接触退火。然后将碳漆并置在P3HT的顶部,并蒸发掉金。整个结构在110到190℃之间的温度(T2)下第二次退火,称为金属后接触退火。退火后P3HT薄膜的(1 0 0)晶面和光吸收系数不断增加温度表明由热退火过程引起的聚合物膜内部分子序的改善。顺序更好的P3HT薄膜在相应的太阳能电池中导致较低的串联电阻和较高的填充系数,这表明退火的P3HT薄膜中电荷载流子迁移率增大。另一方面,光伏性能也受T2温度的影响。低的T2改善了P3HT和金属触点之间的欧姆接触,从而有利于电荷载流子的提取,而高的T2可能会使这种结合恶化。在具有不同厚度的P3HT膜的CdS / P3HT太阳能电池中也获得了相同的观察结果。在T1&oot退火的305 nm厚的P3HT的CdS / P3HT电池中,获得的最佳能量转换效率为0.44%。 190 C和T2&oot; 110℃,每次10分钟。

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