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首页> 外文期刊>The European physical journal, D. Atomic, molecular, and optical physics >Polarizabilities of Si_N (N = 8–75) clusters from molecular beam electric deflection experiments
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Polarizabilities of Si_N (N = 8–75) clusters from molecular beam electric deflection experiments

机译:Si_N(N = 8–75)团簇的极化率通过分子束电偏转实验得出

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摘要

We have studied the polarizabilities of neutral silicon clusters with 8 to 75 atoms at 300 K employing the molecular beam deflection technique. In the range of 8 to 30 atoms the polarizability is strongly size-dependent, whereas for clusters up to 75 atoms polarizability approaches the bulk value of 3.71 ?A3, estimated from the Clausius-Mossotti relation for α-Si. This indicates a transition in the growing pattern of silicon clusters in this range. For some clusters, i.e. Si18, we observe a significantly increased polarizability compared to the bulk value, which can be interpreted by taking a permanent dipole moment via a simple Langevin-Debye model into account.
机译:我们已经使用分子束偏转技术研究了在300 K下具有8到75个原子的中性硅团簇的极化率。在8到30个原子的范围内,极化率与尺寸密切相关,而对于簇数高达75个原子,极化率接近3.71?A3的体积值,根据α-Si的Clausius-Mossotti关系估算。这表明在该范围内硅簇的生长模式发生了转变。对于某些簇,即Si18,我们观察到极化率与总体值相比显着提高,这可以通过考虑简单的Langevin-Debye模型的永久偶极矩来解释。

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