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首页> 外文期刊>The European physical journal, D. Atomic, molecular, and optical physics >A diffuse plasma generated by bipolar nanosecond pulsed dielectric barrier discharge in nitrogen
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A diffuse plasma generated by bipolar nanosecond pulsed dielectric barrier discharge in nitrogen

机译:氮中双极纳秒脉冲介电势垒放电产生的扩散等离子体

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In this study, a bipolar high-voltage pulse with 20 ns rising time is employed to generate diffuse dielectric barrier discharge plasma using wire-plate electrode configuration in nitrogen at atmospheric pressure. The gas temperature of the plasma is determined by comparing the experimental and the best fitted optical emission spectra of the second positive bands of N_2(C~3Π_u → B~3Π_g, 0-2) and the first negative bands of N_ 2~+ (B~2Σ_u~+ → X~2Σ_g~+, 0-0). The effects of the concentration of argon and oxygen on the emission intensities of N_2(C~3Π_u → B~3Π_g, 0-0, 337.1 nm), OH(A~2Σ → X~2Π, 0-0) and N_2~+ (B~2Σ_u~+ → X~2Σ_g~+, 0-0, 391.4 nm) are investigated. It is shown that the plasma gas temperature keeps almost constant with the pulse repetition rate and pulse peak voltage increasing. The emission intensities of N_2(C~3Π_u → B~3Π_g, 0-0, 337.1 nm), OH(A~2Σ → X~2Π, 0-0) and N_2~+ (B~2Σ_u~+ → X~2Σ_g~+, 0-0, 391.4 nm) rise with increasing the concentration of argon, but decrease with increasing the concentration of oxygen, and the influences of oxygen concentration on the emission intensities of N_2(C~3Π_u → B~3Π_g, 0-0, 337.1 nm) and OH (A~2Σ → X~2Π, 0-0) are more greater than that on the emission intensity of N_2~+ (B~2Σ_u~+ → X~2Σ_g~+, 0-0, 391.4 nm).
机译:在这项研究中,使用上升时间为20 ns的双极高压脉冲,利用大气压下的氮气中的线板电极配置,生成扩散介电势垒放电等离子体。通过比较N_2(C〜3Π_u→B〜3Π_g,0-2)的第二正带和N_ 2〜+(的第一负带)的实验光谱和最佳拟合光谱来确定等离子体的气体温度B〜2Σ_u〜+→X〜2Σ_g〜+,0-0)。氩和氧浓度对N_2(C〜3Π_u→B〜3Π_g,0-0,337.1 nm),OH(A〜2Σ→X〜2Π,0-0)和N_2〜+的发射强度的影响研究了(B〜2Σ_u〜+→X〜2Σ_g〜+,0-0,391.4 nm)。结果表明,随着脉冲重复频率和脉冲峰值电压的增加,等离子体气体的温度几乎保持恒定。 N_2(C〜3Π_u→B〜3Π_g,0-0,337.1 nm),OH(A〜2Σ→X〜2Π,0-0)和N_2〜+(B〜2Σ_u〜+→X〜2Σ_g)的发射强度〜+,0-0,391.4 nm)随氩气浓度的增加而增加,而随氧气浓度的增加而减小,以及氧气浓度对N_2(C〜3Π_u→B〜3Π_g,0- 0,337.1 nm)和OH(A〜2Σ→X〜2Π,0-0)大于N_2〜+(B〜2Σ_u〜+→X〜2Σ_g〜+,0-0, 391.4 nm)。

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