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Tensoresistive effect in thin metal films in the range of elastic and plastic strain

机译:弹性和塑性应变范围内的金属薄膜的拉伸电阻效应

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The tensoresistive effect in single-layer Cr, Fe, Mo, Ni, and Pd films and double-layer Fe/Cr, Cu/Cr, Ni/Cr, and Pd/Fe films is studied in the range of elastic and plastic strain. The influence of the surface and grain-boundary scatterings of electrons on strain sensitivity S~ρ of the single-layer films is analyzed. Sensitivities Sρ of the single- and double-layer films to elastic and plastic strains are compared. It is found that the volume and grain-boundary scatterings of electrons are main contributors to S~ρ in the Fe/Cr film system. Grain-boundary scattering is equally effective under elastic and plastic strain, as judged by a high coefficient of electron grain-boundary scattering (R {all equal to} 0.36-0.41).
机译:在弹性应变和塑性应变的范围内,研究了单层Cr,Fe,Mo,Ni和Pd薄膜以及双层Fe / Cr,Cu / Cr,Ni / Cr和Pd / Fe薄膜的拉伸电阻效应。分析了电子的表面和晶界散射对单层膜应变敏感性S〜ρ的影响。比较了单层和双层膜对弹性和塑性应变的敏感性Sρ。发现在Fe / Cr膜系统中电子的体积和晶界散射是S〜ρ的主要贡献者。晶界散射在弹性和塑性应变下同样有效,这可以通过高电子晶界散射系数来判断(R {均等于} 0.36-0.41)。

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