Influence of Fine-Grained Vanadium-Based Layers on the Photoresponse Multiplicity in Structures with Amorphous As_2Se_3 Films

V. D. Prilepov; P. A. Gasin; A. B. Chirita; D. M. Spoiala

首页> 外文期刊>Technical physics >Influence of Fine-Grained Vanadium-Based Layers on the Photoresponse Multiplicity in Structures with Amorphous As_2Se_3 Films

【24h】

Influence of Fine-Grained Vanadium-Based Layers on the Photoresponse Multiplicity in Structures with Amorphous As_2Se_3 Films

机译：细晶粒的钒基层对非晶As_2Se_3薄膜结构中光响应多样性的影响

获取原文

获取原文并翻译 | 示例

获取外文期刊封面封底 >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

The fabrication of vanadium-based fine-grained structures including those with a branched (fractal) surface is described. The application of amorphous As_2Se_3 films on these fractal surfaces is shown to increase the multiplicity of photoresponse from the structure.

机译：描述了钒基细晶粒结构的制造，包括具有分支（分形）表面的那些。非晶态As_2Se_3薄膜在这些分形表面的应用显示出可增加结构光响应的多样性。

著录项

来源
《Technical physics》 |2010年第5期|共3页
作者
V. D. Prilepov; P. A. Gasin; A. B. Chirita; D. M. Spoiala;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类 Tb13;
关键词

相似文献

外文文献
中文文献
专利

1. Influence of Fine-Grained Vanadium-Based Layers on the Photoresponse Multiplicity in Structures with Amorphous As_2Se_3 Films [J] . V. D. Prilepov, P. A. Gasin, A. B. Chirita, Technical physics . 2010,第5期

机译：细晶粒的钒基层对非晶As_2Se_3薄膜结构中光响应多样性的影响
2. Durability and photo-electric characteristics of a mille-feuille structured amorphous selenium (a-Se)-arsenic selenide (As_2Se_3) multi-layered thin film [J] . Saito I., Masuzawa T., Kudo Y., Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2013,第Null期

机译：千层结构的非晶硒（a-Se）-硒化砷（As_2Se_3）多层薄膜的耐久性和光电特性
3. The influence on electrical characteristics of amorphous indium tungsten oxide thin film transistors with multi-stacked active layer structure [J] . Ruan Dun-Bao, Liu Po-Tsun, Gan Kai-Jhih, Thin Solid Films . 2018,第NOVa30期

机译：具有多层有源层结构的非晶铟氧化钨薄膜晶体管的电特性的影响
4. The Influence of Interface Silicon Oxide Layer on Photovoltaic Effect of Iron-doped Amorphous Carbon film/SiO_2/Si Based Heterostructure [C] . Rong Li, Xinyu Tan, Yuehua Huang, International Conference on Advanced Engineering Materials and Technology . 2011

机译：界面氧化硅层对铁掺杂无定形碳膜/ Si_2 / Si异质结构的光伏作用的影响
5. Physical Properties and Local Structures of Amorphous Zinc-Tin-Oxygen and Amorphous Indium-Gallium-Oxygen Films. [D] . Zhu, Qimin. 2013

机译：非晶锌-锡-氧薄膜和非晶铟-镓-氧薄膜的物理性质和局部结构。
6. Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors [O] . Yan Zhou, Chengyuan Dong 2018

机译：钝化层对非晶InGaZnO薄膜晶体管正栅极偏置-应力稳定性的影响
7. Pulsed laser deposited amorphous chalcogenide and alumino-silicate thin films and their multilayered structures for photonic applications [O] . Němec, Petr, Charrier, Joël, Cathelinaud, Michel, 2013

机译：脉冲激光沉积非晶硫属元素化物和铝硅酸盐薄膜及其多层结构，用于光子应用

Influence of Fine-Grained Vanadium-Based Layers on the Photoresponse Multiplicity in Structures with Amorphous As_2Se_3 Films

摘要

著录项

相似文献

相关主题

期刊订阅