A Magnetic-Field Bending Resonance Sensor with Maximum Generated Magnetoelectric Voltage

摘要

A bending resonance magnetoelectric (ME) sensor with maximum generated response voltage is theoretically described. Based on the proposed model, the frequency dependence of the ME coefficient is determined. The optimum thickness of a piezoceramic layer is proposed, which provides a twofold increase in the response voltage. The phenomenon of antiresonance suppression of oscillations in the region of the third bending resonance at 95 Hz is discovered.