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首页> 外文期刊>Technical physics letters: Letters to the Russian journal of applied physics >Composition and submicron structure of chemically deposited Cu _2Se-In _2Se _3 films
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Composition and submicron structure of chemically deposited Cu _2Se-In _2Se _3 films

机译:化学沉积Cu _2Se-In _2Se _3薄膜的组成和亚微米结构

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摘要

Films of substitutional solid solutions of the Cu _2Se-In _2Se _3 system containing up to 7.5 at. % In have been obtained by chemical deposition from aqueous media. The composition, structure, and morphology of the films have been studied. Data of X-ray diffraction and X-ray photoelectron spectroscopy showed that copper in the solid solution occurs in a single-valence state (Cu ~+). The deposited layers possess a globular morphology and are nanostructured.
机译:Cu _2Se-In _2Se _3系统的置换固溶体膜含7.5 at。通过从水介质中化学沉积获得%In。已经研究了膜的组成,结构和形态。 X射线衍射和X射线光电子能谱的数据表明,固溶体中的铜以单价态(Cu〜+)存在。沉积的层具有球形形态并且是纳米结构的。

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