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Ba_4Si_3Br_2:A Double Salt of Barium Bromide and Barium Silicide Containing a Novel Cyclotrisilicide Unit

机译:Ba_4Si_3Br_2:含新型环三硅化物单元的溴化钡和硅化钡的复盐

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摘要

A new compound of the com-position Ba_4Si_3Br_2 was obtained by re-acting BaSi with a melt of BaBr_2.Ba_4Si_3Br_2 may be described as a double .The structure was detdermind by single-crystal X-ray diffraction(P2_1c,#alpha=1504.1(2)b=884.5(1),c=880.2(1)pm,#beta#=101.93(2) deg,R=0.041 R_W=0.097).the crystal structure contains isolated barium cations and bromide anions as well as novel singly bonded cyclotrisili-cid units .The electronic structure has been studied by linear Muffin tin orbital (LMTO)band structure calculations which reveal semiconducing behavior with a band gap of about 0.1eV,and by an analysis of the electron localization function.
机译:通过将BaSi与BaBr_2的熔体反应来获得组成为Ba_4Si_3Br_2的新化合物.Ba_4Si_3Br_2可描述为双原子。通过单晶X射线衍射确定结构(P2_1c,#alpha = 1504.1( 2)b = 884.5(1),c = 880.2(1)pm,#beta#= 101.93(2)deg,R = 0.041 R_W = 0.097)。晶体结构包含孤立的钡阳离子和溴化物阴离子以及新颖的钡通过线性松饼锡轨道(LMTO)带结构计算研究了电子结构,该结构揭示了带隙约为0.1eV的半导体行为,并通过电子定位函数进行了分析。

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