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首页> 外文期刊>Chemistry, an Asian journal >Syntheses, Photophysics, and Application of Iridium(III) Phosphorescent Emitters for Highly Efficient, Long-Life Organic Light-Emitting Diodes
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Syntheses, Photophysics, and Application of Iridium(III) Phosphorescent Emitters for Highly Efficient, Long-Life Organic Light-Emitting Diodes

机译:高效,长寿命有机发光二极管的铱(III)磷光发光体的合成,光物理及其应用

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Rational design and synthesis of Ir~(III) complexes (1-3) bearing two cyclometalated ligands (C^N) and one 2-(diphenylphosphino)phenolate chelate (P^O) as well as the corresponding Ir~(III) derivatives (4-6) with only one (C^N) ligand and two P^O chelates are reported, where (C^NH)(velence)phenylpyridine (ppyH), 1-phenylisoquinoline (piqH), and 4-phenylquinazoline (nazoH). Single crystal X-ray diffraction studies of 3 reveal a distorted octahedral coordination geometry, in which two nazo ligands adopt an eclipsed configuration, with the third P^O ligand located trans to the phenyl group of both nazo ligands, confirming the general skeletal pattern for 1-3. In sharp contrast, complex 4 reveals a trans-disposition for the PPh_(2) groups, along with the phenolate groups residing opposite the unique cyclometalated ppy ligand, which is the representative structure for 4-6. These Ir~(III) complexes exhibit green-to-red photoluminescence with moderate to high quantum efficiencies in the degassed fluid state and bright emission in the solid state. For 1-6, the resolved emission spectroscopy and relaxation dynamics are well rationalized by the computational approach. OLEDs fabricated using 12 wt.percent of 3 doped in CBP and with BCP as hole blocking material, give bright electroluminescence with (lambda)_(max)velence628 nm and CIE_(xy) coordinates (0.65, 0.34). The turn-on voltage is 3.2 V, while the current efficiency and the power efficiency reach 11.2 cdA~(-1) and 4.5 lm W~(-1) at 20 mA cm~(-2). The maximum efficiency reaches 14.7 cd A~(-1) and 6.8 lmW~(-1) upon switching to TPBI as hole blocking material. For evaluating device lifespan, the tested device incorporating CuPc as a passivation layer, 3 doped in CTP as an emitting layer, and BAlq as hole blocking material, shows a remarkably long lifetime up to 36000 h at an initial luminance of 500 cd m~(-2).
机译:带有两个环金属化配体(C ^ N)和一个2-(二苯基膦基)酚盐螯合物(P ^ O)以及相应的Ir〜(III)衍生物的Ir〜(III)配合物(1-3)的合理设计和合成(4-6)只有一个(C ^ N)配体和两个P ^ O螯合物,其中(C ^ NH)(velence)苯基吡啶(ppyH),1-苯基异喹啉(piqH)和4-苯基喹唑啉(nazoH) )。 3的单晶X射线衍射研究揭示了扭曲的八面体配位几何结构,其中两个Nazo配体呈偏光构型,而第三个P ^ O配体位于两个Nazo配体的苯基上,证实了其总体骨架模式。 1-3。与之形成鲜明对比的是,配合物4揭示了PPh_(2)基团的转位,以及与独特的环金属化ppy配体相对的酚盐基团,这是4-6的代表性结构。这些Ir〜(III)配合物在脱气流体状态下显示出绿色到红色的光致发光,具有中等至高的量子效率,在固态下显示出明亮的发射光。对于1-6,通过计算方法可以很好地使分辨发射光谱和弛豫动力学合理化。使用在CBP中掺杂的12 wt。%的3和以BCP作为空穴阻挡材料制造的OLED,可产生具有λ_(max)velence628 nm和CIE_(xy)坐标(0.65,0.34)的明亮电致发光。接通电压为3.2 V,而电流效率和功率效率在20 mA cm〜(-2)时达到11.2 cdA〜(-1)和4.5 lm W〜(-1)。当转换为TPBI空穴阻挡材料时,最大效率达到14.7 cd A〜(-1)和6.8 lmW〜(-1)。为了评估器件的寿命,被测试的器件包括CuPc作为钝化层,3掺杂在CTP中作为发光层,BAlq作为空穴阻挡材料,在初始亮度为500 cd m〜时显示长达36000 h的超长寿命。 -2)。

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