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首页> 外文期刊>Propellants, Explosives, Pyrotechnics >Charge Density Distribution, Electrostatic Properties, and Impact Sensitivity of the High Energetic Molecule TNB: A Theoretical Charge Density Study
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Charge Density Distribution, Electrostatic Properties, and Impact Sensitivity of the High Energetic Molecule TNB: A Theoretical Charge Density Study

机译:高能分子TNB的电荷密度分布,静电性质和冲击敏感性:理论电荷密度研究

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摘要

A quantum chemical calculation and a charge density analysis have been performed on the energetic molecule trinitrobenzene (TNB) to characterize its bond strength and to relate the bond topological parameters with the impact sensitivity. The optimized geometry of the molecule was calculated by the density functional method B3P86 with the basis set 6-311G**. The bond topological analysis predicts a significantly low bond electron density (~1770 e nm~(-3)) as well as Laplacian of electron density (—1.67 x 10~6 e nm~(-5)) for C—N bonds. This low value of the Laplacian indicates, the charges of these bonds are highly depleted, which confirms that these are the weakest bonds in the molecule. The N = O bonds bear a high negative value of Laplacian, reflecting that the bond charges are highly concentrated. The isosurface of the molecular, electrostatic potential (ESP) shows large electronegative regions at the vicinity of —NO2 groups. Further analysis of ESP in the bonding region allows predicting the impact sensitivity. A sound relationship has been found between the ESP at the mid point of the bonds and its bond charge depletion. The positive ESP at the mid points of highly charge depleted C—NO2 bonds reveals that these bonds are the sensitive bonds in the molecule.
机译:对高能分子三硝基苯(TNB)进行了量子化学计算和电荷密度分析,以表征其键合强度,并将键合拓扑参数与冲击敏感性相关联。分子的最佳几何结构是通过密度泛函方法B3P86以6-311G **为基础计算的。键拓扑分析预测,CN键的电子密度极低(〜1770 e nm〜(-3)),而拉普拉斯电子密度(-1.67 x 10〜6 e nm〜(-5))也很低。拉普拉斯算子的这个低值表明,这些键的电荷高度耗尽,这证实了它们是分子中最弱的键。 N = O键具有很高的拉普拉斯负值,反映了键电荷高度集中。分子静电势(ESP)的等值面在-NO2基团附近显示出较大的负电区域。对结合区域中的ESP的进一步分析可以预测冲击敏感性。在债券中点的ESP和其债券电荷消耗之间发现了良好的关系。高电荷消耗的C-NO2键的中点处的正ESP表明,这些键是分子中的敏感键。

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