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Reflection distributions of textured monocrystalline silicon:implications for silicon solar cells

机译:织构单晶硅的反射分布:对硅太阳能电池的启示

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A common misconception is that alkaline textured silicon solar cell surfaces are characterised by features that are pyramidal and bounded by {111} planes. In preference to the typical approach of observing scanning electron microscope images, we analyse reflection distributions from various pyramidal textures and find that {111} faceted pyramids are a poor approximation to the features on such surfaces. We conclude that features are hillocks, with an octagonal base. Furthermore, the characteristic base angle of the texture depends on the etchant and is closer to 50-52° than the commonly accepted value of 54.74°. Analyses of antireflection, light trapping, photogeneration and surface recombination properties of textured surfaces should take this feature morphology into account. The base angle has a strong influence on the hemispherical reflectance of the textured surface, with higher angles resulting in reduced reflectance. The influence of this reflection enhancement upon device performance is smallest when an optimised antireflection coating is applied;;compared with an array of {111} faceted pyramids, a hillock morphology with 50° base angle results in a 0.2% reduction in photogenerated current in a typical cell. Additionally, as base angle is reduced, an encapsulant of increasingly higher refractive index is required to drive internal reflection at the air-glass interface of light initially reflected from the cell surface. The development of texturing processes resulting in higher base angles is encouraged.
机译:一个常见的误解是碱性纹理化的硅太阳能电池表面的特征是呈金字塔形并受{111}平面限制的特征。相对于观察扫描电子显微镜图像的典型方法,我们分析了来自各种金字塔纹理的反射分布,发现{111}刻面金字塔与此类表面上的特征的近似性很差。我们得出结论,特征是具有八边形底的小丘。此外,纹理的特征底角取决于蚀刻剂,并且比通常接受的54.74°值更接近50-52°。分析带纹理表面的抗反射,陷光,光生和表面重组特性时,应将此特征形态考虑在内。底角对纹理化表面的半球反射率有很大影响,而较大的角度会导致反射率降低。当应用优化的抗反射涂层时,这种反射增强对器件性能的影响最小;与一系列{111}刻面金字塔相比,底角为50°的小丘形貌会导致光生电流降低0.2%。典型的单元格。另外,随着底角的减小,需要折射率越来越高的密封剂来驱动最初从细胞表面反射的光在气-玻璃界面处的内部反射。鼓励开发导致更高底角的纹理化工艺。

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