Elimination of Light-induced Degradation with Gallium-doped Multicrystalline Silicon Wafers

摘要

Lifetime stability of gallium-doped multicrystalline silicon wafers has been evaluated under illumination. Quality and stability of the Ga-doped multicrystalline silicon wafers were intensively studied by means of quasi-steady-state photocondcutance lifetime measurement. Results show that as-grown Ga-doped multicrystalline silicon wafers have high lifetimes, and no significant degradation was observed under illumination. The Ga-doped multicrystalline silicon wafers are a promising material for future photovoltaics.