Nano-patterned visible wavelength filter integrated with an image sensor exploiting a 90-nm CMOS process

摘要

A highly efficient visible wavelength filter enabling a homogeneous integration with an image sensor was proposed and manufactured by employing a standard 90-nm CMOS process. A one dimensional sub wavelength Al grating overlaid with an oxide film was built on top of an image sensor to serve as a low-pass wavelength filter; a microlens was then formed atop the filter to achieve beam focusing. The structural parameters for the filter were: a grating pitch of 300 nm, a grating height of 170 nm, and a 150-nm thick oxide overlay. The overall transmission was observed to reach up to 80% in the visible band with a decent roll-off near ～700 nm. Finally, the discrepancy between the observed and calculated result was accounted for by appropriately modeling the implemented metallic grating structure, accompanying an undercut sidewall.