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A Langmuir probe system for high power RF-driven negative ion sources on high potential

机译:Langmuir探针系统,用于高电势下的高功率射频驱动负离子源

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摘要

A fully automated Langmuir probe system capable of operating simultaneously with beam extraction has been developed and commissioned for the negative hydrogen ion source testbeds at IPP Garching. It allows the measurement of temporal and spatial distributions of the plasma parameters within a single plasma pulse ( 5 s). This system can operate even in the presence of multi- harmonic RF interference due to a novel transformer- based RF compensation system. Analysis methods of the probe data are described in the paper along with a discussion of errors. Measurements of the plasma parameters for RF powers (30 - 80 kW) and source pressures (0.3-0.8 Pa) both in plasma generation region and near the plasma grid have been carried out. The plasma generation region has both a high density (> 10(18) m(-3)) and hot (T-e > 10 eV) plasma with bi-Maxwellian electron energy distribution at low pressures. The plasma found near the plasma grid is very different being of low density (<= 10(18) m(-3)) and very cold ( Te < 2 eV). This plasma is also strongly influenced by the presence of caesium, the potential of the plasma grid, and if an ion beam is extracted from the source. Caesium strongly reduces the plasma potential of the source and enhances the negative ion density near the plasma grid. Extracting an ion beam is observed to reduce the electron density and increase the potential near the plasma grid. Applying a potential greater than the plasma potential to the plasma grid is found to significantly decrease the electron density near the plasma grid.
机译:在IPP Garching的负氢离子源测试台上开发并调试了能够与射束提取同时运行的全自动Langmuir探针系统。它允许在单个等离子体脉冲(5 s)内测量等离子体参数的时间和空间分布。由于新型的基于变压器的RF补偿系统,即使存在多谐波RF干扰,该系统也可以运行。本文介绍了探测数据的分析方法,并讨论了错误。在等离子体产生区域以及在等离子体格栅附近,已经对RF功率(30-80kW)和源压力(0.3-0.8Pa)的等离子体参数进行了测量。等离子体产生区域具有高密度(> 10(18)m(-3))和热(T-e> 10 eV)等离子体,在低压下具有双麦克斯韦电子能分布。在等离子网格附近发现的等离子非常不同,它具有低密度(<= 10(18)m(-3))和非常冷(Te <2 eV)。铯的存在,等离子栅的电势以及是否从离子源中提取了离子束,也会严重影响该等离子体。铯会大大降低离子源的等离子电势,并增加等离子栅附近的负离子密度。观察到提取离子束会降低电子密度并增加等离子体栅附近的电势。发现将大于等离子电势的电势施加到等离子栅会大大降低等离子栅附近的电子密度。

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