Possibilities of studying nanoobjects in porous silicon and silicon substrates irradiated with protons by positron annihilation spectroscopy

摘要

The chemical composition of the material at the annihilation sites (silicon atoms of the pore "wall"), the size of nanodefects, and their concentration in porous silicon and single-crystal silicon wafers irradiated by protons have been determined using the angular distribution of annihilation photons.