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Measurements and modeling of the microwave impedance in high-T-c grain-boundary Josephson junctions: Fluxon generation and rf Josephson-vortex dynamics

机译:高T-c晶界约瑟夫森结中微波阻抗的测量和建模:磁通产生和射频约瑟夫森涡旋动力学

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Measurements and modeling of the microwave-frequency (rf) power dependence of the impedance in Y-Ba-Cu-O thin-film grain-boundary Josephson junctions (JJ's) are presented. Microwave impedance measurements were performed using a stripline resonator with an engineered grain-boundary JJ as a function of rf current (10(-4)-1 A) and temperature (5-70 K). To understand the observed power dependence, we have developed a long-junction model which allows for Josephson-vortex creation, annihilation, and motion. The impedance calculated using the long-junction model fits the measured data qualitatively. We show that Josephson vortices generated by the rf fields cause nonlinearities in the impedance, resulting in increases in both resistance and reactance with steps in the resistance due to flux quantization. These observations and analysis of Josephson-vortex effects at microwave frequencies have important implications for understanding rf power handling in high-T-c films. [References: 26]
机译:介绍了Y-Ba-Cu-O薄膜晶界约瑟夫森结(JJ's)中阻抗的微波频率(rf)功率相关性的测量和建模。微波阻抗测量是使用带状线谐振器进行的,该带状谐振器的工程晶界JJ是rf电流(10(-4)-1 A)和温度(5-70 K)的函数。为了了解观察到的功率依赖性,我们开发了一个长连接模型,该模型允许创建约瑟夫森涡旋,an灭和运动。使用长结模型计算出的阻抗在质量上与测量数据相符。我们表明,由rf场产生的约瑟夫森涡旋会导致阻抗非线性,从而由于通量量化而导致电阻和电抗随电阻阶跃的增加而增加。这些对微波频率的约瑟夫森涡旋效应的观察和分析对于理解高T-c膜的射频功率处理具有重要意义。 [参考:26]

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