首页> 外文期刊>Physical Review, B. Condensed Matter >WEAK-LOCALIZATION, ASLAMAZOV-LARKIN, AND MAKI-THOMPSON SUPERCONDUCTING FLUCTUATION EFFECTS IN DISORDERED ZR1-XRHX FILMS ABOVE T-C
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WEAK-LOCALIZATION, ASLAMAZOV-LARKIN, AND MAKI-THOMPSON SUPERCONDUCTING FLUCTUATION EFFECTS IN DISORDERED ZR1-XRHX FILMS ABOVE T-C

机译:T-C上方无序ZR1-XRHX膜的弱局部化,ASLAMAZOV-LARKIN和MAKI-汤普森超导波动效应

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摘要

The transverse magnetoresistance of disordered Zr1-xRhx thin films has been measured above the superconducting transition temperature T-c as a function of temperature in a magnetic field up to 60 kG. The investigated films are disordered enough to indicate quantum corrections due to localization and electron-electron interaction effects. The field and temperature dependence of the observed magnetoresistance is interpreted in terms of weak-localization, Aslamazov-Larkin, and Maki-Thompson superconducting fluctuations effects. From the comparison of the experimental results with theoretical calculations, the electron-electron attraction strength, beta(T/T-c), is derived and is in good agreement with Larkin's theory. The total phase-breaking rate tau(phi)(-1) has been estimated and ascribed to electron-phonon, electron-electron, electron-fluctuation, and spin-flip scattering mechanisms. [References: 41]
机译:Zr1-xRhx薄膜的横向磁致电阻已在超导转变温度T-c以上测量,该磁场温度是磁场中温度的函数,最高可达60 kG。被研究的薄膜由于局域性和电子-电子相互作用的影响而无序地表明量子校正。所观察到的磁阻的场和温度依赖性由弱局部化,Aslamazov-Larkin和Maki-Thompson超导波动效应来解释。通过将实验结果与理论计算进行比较,得出了电子-电子吸引力强度β(T / T-c),与拉金理论非常吻合。总断相率tau(phi)(-1)已估算出来,并归因于电子声子,电子-电子,电子涨落和自旋翻转散射机制。 [参考:41]

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