首页> 外文期刊>Physical Review, B. Condensed Matter >ELECTRONIC STRUCTURE OF THE QUASI-ONE-DIMENSIONAL HALOGEN-BRIDGED NI COMPLEXES [NI(CHXN)(2)X]X(Z) (X=CL, BR) AND RELATED NI COMPOUNDS
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ELECTRONIC STRUCTURE OF THE QUASI-ONE-DIMENSIONAL HALOGEN-BRIDGED NI COMPLEXES [NI(CHXN)(2)X]X(Z) (X=CL, BR) AND RELATED NI COMPOUNDS

机译:准一维卤代桥Ni络合物[NI(CHXN)(2)X] X(Z)(X = CL,BR)和相关NI化合物的电子结构

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The electronic structure of the one-dimensional Ni complexes, [Ni(chxn)(2)X]X(2)(X=Cl, Br; (chxn)=1R,2R-cyclohexanediamine), is studied together with the discrete Ni complexes, [NiX(2)([14]aneN(4))]ClO4(X = Cl; Br;([14]aneN(4))=1,4,8,11-tetraazacyclotetradecane), using optical spectroscopy, x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy. The optical spectra show that the Br compounds have a smaller gap as compared with the Cl compounds. An analysis using a simple X-Ni-X trimer model on the optical spectra and the Ni 2p XP spectra yields quantitative estimates for the charge transfer (CT) energy Delta and the transfer energy T for discrete and one-dimensional Ni complexes. The analysis on the Ni LVV Auger spectra in conjunction with the valence XP spectra indicates that the average on-side d-d Coulomb energy U in the one-dimensional and discrete Ni complexes is about 5 eV, quite similar to the case of the Ni dihalides. The obtained results demonstrate that the one-dimensional Ni complexes are CT insulators. We discuss the differences in the electronic structures of the one-dimensional Ni complexes compared with the Ni dihalides and the one-dimensional Pt complexes on the basis of the estimated parameter values of Delta, T, and Li. [References: 38]
机译:一维Ni络合物的电子结构[Ni(chxn)(2)X] X(2)(X = Cl,Br;(chxn)= 1R,2R-环己二胺)与离散Ni一起研究配合物,[NiX(2)([14] aneN(4))] ClO4(X = Cl; Br;([14] aneN(4))= 1,4,8,11-四氮杂环十四烷),使用光谱法, X射线光电子能谱(XPS)和俄歇电子能谱。光谱表明,与Cl化合物相比,Br化合物具有较小的间隙。使用简单的X-Ni-X三聚体模型对光谱和Ni 2p XP光谱进行分析,可以得出电荷转移(CT)能量Delta和离散和一维Ni络合物的转移能T的定量估计。对Ni LVV Auger光谱和价XP光谱的分析表明,一维和离散Ni配合物中的平均d-d库仑能量U约为5 eV,与二卤化Ni的情况非常相似。所得结果表明,一维Ni配合物是CT绝缘体。我们基于Delta,T和Li的估计参数值,讨论了一维Ni络合物与二卤化镍Ni和一维Pt络合物的电子结构差异。 [参考:38]

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