DEPTH PROFILES OF INTERSTITIAL HALOGEN DEFECTS IN HIGH-ENERGY ION-BOMBARDED RBI BY MICRO-RAMAN SPECTROSCOPY

摘要

Micro-Raman spectroscopy has been used to measure the depth profiles of halogen aggregates in both x-irradiated and ion-bombarded RbI. In experiments using argon ions of energy 13.6 MeV/A, it is shown that the I-n(-) clusters are significantly enhanced in the region of large excitation density near the maximum in electronic energy loss at the expense of the I-3(-) defects. The investigations of fluence dependence show that the number of I-3(-) defects is progressively enhanced with increasing fluence at all depths within the damaged region. The results are examined in the light of current theoretical models of ion-beam interactions with alkali halides. [References: 23]