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首页> 外文期刊>Physical review, B >Oscillatory magnetic anisotropy and spin-reorientation induced by heavy-metal cap in Cu/FeCo/M (M = Hf or Ta): A first-principles study
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Oscillatory magnetic anisotropy and spin-reorientation induced by heavy-metal cap in Cu/FeCo/M (M = Hf or Ta): A first-principles study

机译:第一性原理研究Cu / FeCo / M(M = Hf或Ta)中的重金属帽引起的振荡磁各向异性和自旋取向

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Using ab initio electronic structure calculations we have investigated the effect of the thickness of a heavy-metal (HM) cap on the magnetic anisotropy of the Cu/FeCo/HM(n) thin film where HM= Hf and Ta with thicknesses of n = 0-10 monolayers (MLs). We find that the Hf cap results in a large perpendicular magnetic anisotropy (PMA), which exhibits quasiperiodic oscillation with a period of two MLs. In contrast, the Ta-capped heterostructure exhibits a spin reorientation from out-of-plane to in-plane magnetization orientation at two MLs of Ta. Moreover, the MA remains negative and depends weakly on the Ta-cap thickness beyond the critical thickness. The underlying mechanism of the PMA oscillation is the periodic change in spin-flip spin-orbit coupling between the minority-spin Fe d(xz, yz) and majority Fe d(z(2)) at (Gamma) over bar, which is induced by the hybridization with Hf at the FeCo/Hf interface. Our results help resolve the contradictory experiments regarding the role of the FeCo/Ta interface on the PMA of the MgO/FeCo/Ta junction. The calculations reveal that the ferromagnet/Hf is promising for spintronic applications and that the capping material and thickness are additional parameters for optimizing the functional properties of spintronic devices.
机译:使用从头开始的电子结构计算,我们研究了重金属(HM)盖的厚度对Cu / FeCo / HM(n)薄膜的磁各向异性的影响,其中HM = Hf,Ta为n = 0-10个单层(ML)。我们发现,Hf帽会导致较大的垂直磁各向异性(PMA),该磁各向异性表现出具有两个ML周期的准周期振荡。相比之下,Ta封端的异质结构在Ta的两个ML处表现出自平面外磁化取向到平面内磁化取向的自旋重新取向。此外,MA仍为负值,并且弱于Ta帽厚度超过临界厚度。 PMA振荡的基本机制是在杆上方(γ)处的少数自旋Fe d(xz,yz)和多数Fe d(z(z(2))之间的自旋翻转自旋轨道耦合的周期性变化,这是通过在FeCo / Hf界面上与Hf杂交而诱导。我们的结果有助于解决有关FeCo / Ta界面在MgO / FeCo / Ta结的PMA上的作用的矛盾实验。计算表明,铁磁体/ Hf在自旋电子学应用中很有前途,并且封盖材料和厚度是优化自旋电子器件功能特性的附加参数。

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