DEFECTS IN ELECTRON-IRRADIATED INP STUDIED BY POSITRON LIFETIME SPECTROSCOPY

摘要

A study of electron-irradiation-induced defects in undoped InP was carried out. The irradiation was performed at low temperature (4 K) with an incident energy of 2 MeV. The defect formation and annealing behavior in dependence on the fluence (10(15)-10(19) cm(-2)) were studied in InP. Annealing experiments between 90 and 800 K and temperature-dependent measurements between 20 and 600 K were performed. A main annealing stage between 140 and 210 K dependent on the irradiation fluence was attributed to the annealing of Frenkel pairs in both sublattices. After an annealing temperature of about 350 K a second vacancylike defect becomes detectable by positrons. This defect contains several vacancies and their number increases with irradiation fluence. The annealing stage for these clusters occurs between 590 and 800 K dependent on the cluster size. [References: 27]