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首页> 外文期刊>Physical review, B >Direct measurement of interfacial Dzyaloshinskii-Moriya interaction in X vertical bar CoFeB vertical bar MgO heterostructures with a scanning NV magnetometer (X=Ta, TaN, and W)
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Direct measurement of interfacial Dzyaloshinskii-Moriya interaction in X vertical bar CoFeB vertical bar MgO heterostructures with a scanning NV magnetometer (X=Ta, TaN, and W)

机译:使用扫描NV磁力计(X = Ta,TaN和W)直接测量X垂直棒CoFeB垂直棒MgO异质结构中的界面Dzyaloshinskii-Moriya相互作用

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摘要

The Dzyaloshinskii-Moriya interaction (DMI) has recently attracted considerable interest owing to its fundamental role in the stabilization of chiral spin textures in ultrathin ferromagnets, which are interesting candidates for future spintronic technologies. Here we employ a scanning nanomagnetometer based on a single nitrogen-vacancy defect in diamond to locally probe the strength of the interfacial DMI in CoFeB vertical bar MgO ultrathin films grown on different heavy metal underlayers X = Ta, TaN, and W. By measuring the stray field emanating from domain walls in micron-long wires of such materials, we observe deviations from the Bloch profile for TaN and W underlayers that are consistent with a positive DMI value favoring right-handed chiral spin structures. Moreover, our measurements suggest that the DMI constant might vary locally within a single sample, illustrating the importance of local probes for the study of magnetic order at the nanoscale.
机译:由于Dzyaloshinskii-Moriya相互作用(DMI)在稳定超薄铁磁体中的手性自旋织构中起着重要作用,最近引起了相当大的兴趣,超薄铁磁体中的手性自旋织构是未来自旋电子技术的有趣候选者。在这里,我们使用基于金刚石中单个氮空位缺陷的扫描纳米磁力仪来局部探测在不同重金属下层X = Ta,TaN和W上生长的CoFeB垂直棒MgO超薄膜中界面DMI的强度。从此类材料的微米级长丝的畴壁发出的杂散场,我们观察到TaN和W底层与Bloch轮廓的偏差与正DMI值一致,有利于右旋手性自旋结构。此外,我们的测量结果表明,DMI常数可能在单个样品中局部变化,这说明了局部探针对于研究纳米级磁序的重要性。

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