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首页> 外文期刊>Chemical engineering journal >Dispersing carbon nanotubes in the unfavorable phase of an immiscible reverse-phase blend with Haake instrument to fabricate high-k nanocomposites with extremely low dielectric loss and percolation threshold
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Dispersing carbon nanotubes in the unfavorable phase of an immiscible reverse-phase blend with Haake instrument to fabricate high-k nanocomposites with extremely low dielectric loss and percolation threshold

机译:用Haake仪器将碳纳米管分散在不混溶的反相共混物中的不利相中,以制备介电损耗和渗透阈值极低的高k纳米复合材料

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How to facilely obtain low dielectric loss and extremely low percolation threshold (P-c) is still a key and interesting issue of developing high-k conductor/polymer composites based on common components. Different from available literatures, a new type of an immiscible polymer blend that has a reversephase morphology, consisting of poly(ether imide) (PEI)/bismaleimide (BD) (20PEI/BD), was selected as the matrix. Note that multi-walled carbon nanotubes (MWCNTs) prefer to disperse in BD but not PEI phase, so this is the common morphology in the MWCNT/20PEI/BD composites through traditional blending method, and the corresponding dielectric properties are not attractive. To overcome this challenge, a new kind of h-MWCNT/20PEI/BD composites of which MWCNTs were stably and uniformly dispersed in PEI continuous phase by Haake instrument with two steps were fabricated at first time. Compared with MWCNT/20PEI/BD composites, the h-MWCNT/20PEI/BD composite has remarkably higher dielectric constant and energy storage density as well as lower dielectric loss; besides, the Pc of the latter is as low as 0.35 wt%, only 60% of that of the former. Specifically, the dielectric constant and loss at 100 Hz of h-0.45MWCNT/20PEI/BD composite with 0.45 wt% MWCNTs are about 25 and 0.8 times of those of 0.5MWCNT/20PEI/BD composite with 0.50 wt% MWCNTs, respectively. The origin behind the attractive results was discussed through intensively investigating the structure of these composites and building equivalent circuits. (C) 2015 Elsevier B.V. All rights reserved.
机译:如何轻松地获得低介电损耗和极低的渗透阈值(P-c),仍然是开发基于通用组件的高k导体/聚合物复合材料的关键和有趣的问题。与现有文献不同,选择了一种具有反相形态的新型不溶混聚合物共混物作为基质,该共混物由聚醚酰亚胺(PEI)/双马来酰亚胺(BD)(20PEI / BD)组成。请注意,多壁碳纳米管(MWCNT)倾向于分散在BD而不是PEI相中,因此这是通过传统共混方法在MWCNT / 20PEI / BD复合材料中常见的形态,并且相应的介电性能也没有吸引力。为了克服这一挑战,首次用两步法制备了一种新型的h-MWCNT / 20PEI / BD复合材料,其中MWCNTs在PEI连续相中稳定且均匀地分散在PEI连续相中。与MWCNT / 20PEI / BD复合材料相比,h-MWCNT / 20PEI / BD复合材料具有更高的介电常数和储能密度以及更低的介电损耗。另外,后者的Pc低至0.35wt%,仅为前者的60%。具体地,具有0.45wt%的MWCNT的h-0.45MWCNT / 20PEI / BD复合材料的介电常数和在100Hz处的损耗分别是具有0.50wt%的MWCNT的0.5MWCNT / 20PEI / BD复合材料的介电常数和在100Hz处的损耗。通过深入研究这些复合材料的结构并构建等效电路,讨论了获得诱人结果的原因。 (C)2015 Elsevier B.V.保留所有权利。

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