Intersubband and intrasubband overlap integrals in AlxGa1-xN/GaN single-well heterostructures

摘要

In this Letter we present the result of numerical calculation for intersubband and intrasubband coupling coefficient for different value of x (Al mole fraction) for AlxGa1-xN/GaN heterostructures. We also propose an analytical relation for H-11(Q) that fits exactly with its numerical calculation. (C) 2003 Elsevier Science B.V. All rights reserved. [References: 10]