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Integrated Reliability Workshop, 1995. Final Report., International

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1.Time-dependent dielectric breakdown of intrinsic SiO₂films under dynamic stress

机译：SiO _{2 本征随时间的介电击穿动应力下的薄膜}
- 作者：Chaparala P.;Suehle J.S.;Messick C.;Roush M.
- 会议名称：《Integrated Reliability Workshop, 1995. Final Report., International》
2.Wafer level reliability procedures to monitor gate oxide qualityusing V ramp and J ramp test methodology

机译：晶圆级可靠性程序，可监控栅极氧化物的质量使用V斜坡和J斜坡测试方法
- 作者：Lie L.N.;Kapoor A.K.
- 会议名称：《Integrated Reliability Workshop, 1995. Final Report., International》
3.Assessing MOS gate oxide reliability on wafer level withramped/constant voltage and current stress

机译：在晶圆级评估MOS栅极氧化物的可靠性斜坡/恒定电压和电流应力
- 作者：Martin A.;Suehle J.;Chaparala P.;OSullivan P.;Mathewson A.;Messick C.
- 会议名称：《Integrated Reliability Workshop, 1995. Final Report., International》
4.Assessment of a unipolar pulsed ramp for the characterisation ofMOS gate oxide reliability

机译：评估单极性脉冲斜坡以表征MOS栅极氧化物的可靠性
- 作者：Martin A.;OSullivan P.;Mathewson A.
- 会议名称：《Integrated Reliability Workshop, 1995. Final Report., International》
5.A new WLR method based on model parameter analysis

机译：基于模型参数分析的WLR新方法
- 作者：Zimmer T.;Duluc J.B.;Milet N.;Dom J.P.
- 会议名称：《Integrated Reliability Workshop, 1995. Final Report., International》
6.A new technique to measure thin oxide thickness in IC manufacturing

机译：测量集成电路制造中薄氧化物厚度的新技术
- 作者：Nayak D.K.;Wang L.;Rakkhit R.
- 会议名称：《Integrated Reliability Workshop, 1995. Final Report., International》
7.WLR fast tests for characterization of a BiCMOS process andidentification of mobile ionic contamination

机译：WLR快速测试，用于表征BiCMOS工艺和流动离子污染的鉴定
- 作者：Poulter M.;Brisbin D.
- 会议名称：《Integrated Reliability Workshop, 1995. Final Report., International》
8.A new method to statistically monitor active area spread and oxidethinning in real devices

机译：统计监测有源区扩散和氧化物的新方法在真实设备中变薄
- 作者：Ghidini G.;Clementi C.
- 会议名称：《Integrated Reliability Workshop, 1995. Final Report., International》
9.A system engineering approach to the design of on-chipelectrostatic discharge protection

机译：一种片上设计的系统工程方法静电放电保护
- 作者：Eaton J. Jr.;Horner R.
- 会议名称：《Integrated Reliability Workshop, 1995. Final Report., International》
10.Detection and analysis of ESD-induced melt filaments for FSRAMs

机译：ESD诱导的FSRAM熔丝的检测和分析
- 作者：Prudhomme M.;Miller J.W.
- 会议名称：《Integrated Reliability Workshop, 1995. Final Report., International》
11.Dielectric step stress and life stress comparison

机译：介电阶跃应力与生活应力的比较
- 作者：Strong A.;Wu E.;Bolam R.
- 会议名称：《Integrated Reliability Workshop, 1995. Final Report., International》
12.Statistical reliability prediction

机译：统计可靠性预测
- 作者：Gibson D.
- 会议名称：《Integrated Reliability Workshop, 1995. Final Report., International》
13.Building in reliability (BIR) with critical nodes

机译：通过关键节点构建可靠性（BIR）
- 作者：Dion M.
- 会议名称：《Integrated Reliability Workshop, 1995. Final Report., International》
14.Simulation of wafer scale diagnosis

机译：晶圆规模诊断仿真
- 作者：Iychettira A.;LaForge L.E.
- 会议名称：《Integrated Reliability Workshop, 1995. Final Report., International》
15.Migrated copper resistive shorts in plastic encapsulated devices

机译：塑料封装设备中的迁移铜电阻短路
- 作者：Yalamanchili P.;Christou A.
- 会议名称：《Integrated Reliability Workshop, 1995. Final Report., International》
16.Reliability prediction through critical area analysis

机译：通过关键区域分析进行可靠性预测
- 作者：Mattick J.H.N.;Kelsall R.W.;Miles R.E.
- 会议名称：《Integrated Reliability Workshop, 1995. Final Report., International》
17.Using CHARM-2 wafers to increase reliability in ion implantprocessing

机译：使用CHARM-2晶圆提高离子注入的可靠性处理中
- 作者：Bammi R.;Reno S.E.
- 会议名称：《Integrated Reliability Workshop, 1995. Final Report., International》
18.Particulate contamination control in plasma processing: building-inreliability for semiconductor fabrication

机译：等离子处理中的微粒污染控制：内置半导体制造的可靠性
- 作者：Selwyn G.S.
- 会议名称：《Integrated Reliability Workshop, 1995. Final Report., International》
19.A case study in a 100×reduction in sodium ions in a 0.8 μmBiCMOS process using triangular voltage sweep

机译：钠离子100倍还原0.8μm的案例研究使用三角电压扫描的BiCMOS工艺
- 作者：Anderson L.;Parikh S.;Nagalingam S.;Haidinyak C.
- 会议名称：《Integrated Reliability Workshop, 1995. Final Report., International》
20.Passivation scheme impact on retention reliability of non volatilememory cells

机译：钝化方案对非易失性化合物保留可靠性的影响记忆单元
- 作者：Bottini R.;Cascella A.;Pio F.;Vajana B.
- 会议名称：《Integrated Reliability Workshop, 1995. Final Report., International》
21.A study of EEPROM endurance correlation with wafer levelreliability data

机译：EEPROM耐久性与晶圆水平的相关性研究可靠性数据
- 作者：Wilkie D.;Hensen M.
- 会议名称：《Integrated Reliability Workshop, 1995. Final Report., International》
22.F contamination effects on intrinsic and extrinsic gate oxidereliability

机译：F污染对本征和非本征栅极氧化物的影响可靠性
- 作者：Ghidini G.;Drera D.;Maugain F.
- 会议名称：《Integrated Reliability Workshop, 1995. Final Report., International》
23.IEEE 1995 International Integrated Reliability Workshop. FinalReport

机译：IEEE 1995国际集成可靠性研讨会。最后报告
- 会议名称：《Integrated Reliability Workshop, 1995. Final Report., International》
24.Detection and measurement of hot carrier degradation associatedwith asymmetric p-channel transistors

机译：与热载流子退化相关的检测和测量带非对称P沟道晶体管
- 作者：Aldridge B.;Sharif N.;Yum E.;Serhan F.
- 会议名称：《Integrated Reliability Workshop, 1995. Final Report., International》
25.WLR TEST STRUCTURE DESIGN

机译：WLR测试结构设计
- 作者：Turner T.
- 会议名称：《Integrated Reliability Workshop, 1995. Final Report., International》
26.Implementation of BIR Concepts

机译：BIR概念的实施
- 作者：Erhart D.L.;Schafft H.A.
- 会议名称：《Integrated Reliability Workshop, 1995. Final Report., International》
27.PACKAGE AND DIE INTERACTIONS

机译：包装和模具相互作用
- 作者：Gee S.;Luu Nguyen;Sweet J.
- 会议名称：《Integrated Reliability Workshop, 1995. Final Report., International》
28.Thin Oxide Reliability

机译：薄氧化物的可靠性
- 作者：Chaparala P.;Suehle J.S.
- 会议名称：《Integrated Reliability Workshop, 1995. Final Report., International》