A study of EEPROM endurance correlation with wafer levelreliability data

摘要

The results of a study of EEPROM endurance correlation withvarious wafer level reliability tests are presented. Samples frommultiple wafer lots of various EEPROM array sizes were cycled, and thedata were compared to wafer level data taken from the same wafer lots.The results show that TDDB studies alone do not correlate well withendurance. Other data, such as yield studies and alignment measurements,also do not completely correlate with endurance. Despite this we believethat the wafer level tests such as TDDB being performed now are goodindicators of overall oxide quality