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SOFC single cells fed by biogas: Experimental tests with trace contaminants

机译:沼气喂养的SOFC单细胞:痕量污染物的实验测试

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HighlightsThe impact of biogas trace compounds on SOFC performance was investigated.Cell performance were experimentally evaluated considering the impact of H2S, HCl and D4.D4 affect the SOFC performance already at 111 ppbv.The threshold limit for H2S was around 2 ppmv and 40 ppmv for HCl.AbstractBiogas from biological treatments and from the waste degradation in landfills generally contains a wide range of trace impurities (e.g., sulphur compounds, siloxanes, halogens, tar compounds, etc.). This paper describes an experimental analysis performed with SOFC single cells fed by a synthetic gas polluted by H2S, HCl, D4 and a mixture of H2S + C2Cl4. The aim is to detect the threshold tolerance limit on different cell performance parameters. Results show how: hydrogen sulphide has a strong impact on the polarization losses due to the nickel sulphide formation on the electrode that causes a mass transfer resistance. Hydrogen chloride particularly limited the electrochemical processes. Octamethylcyclotetrasiloxane (D4) showed a high impact on SOFC performance even at ultra-low level (78–178 ppb(v)) as a consequence of the formation of silicon dioxide covering the anode porous sites. Sulphur added to C2Cl4, accelerated the deterioration of SOFC performance. In addition, current density variations and operating temperature are studied during sulphur poisoning. An opposite behaviour on SOFC performance was revealed by operating temperature and current density.
机译: 突出显示 研究了沼气中痕量化合物对SOFC性能的影响。 < ce:list-item id =“ o0010”> 考虑到H 2 S,HCl和D4。 D4已经影响到111 ppbv的SOFC性能。 H 2 S的HCl约为2 ppmv和40 ppmv。 摘要 来自生物处理和垃圾掩埋场降解产生的沼气通常包含多种痕量杂质(例如, ,硫化合物,硅氧烷,卤素,焦油化合物等)。本文描述了一种由SOFC单电池进行的实验分析,该单电池由被H 2 S,HCl,D4和H 2 S + C 2 Cl 4 。目的是检测不同电池性能参数的阈值公差极限。结果表明:由于在电极上形成硫化镍,从而导致传质阻力,因此硫化氢对极化损耗有很大影响。氯化氢特别限制了电化学过程。八甲基环四硅氧烷(D4)即使在超低水平(78-178 ppb(v))下也表现出对SOFC性能的高影响,这是由于形成了覆盖阳极多孔位点的二氧化硅所致。将硫添加到C 2 Cl 4 中,加速了SOFC性能的恶化。另外,研究了硫中毒期间的电流密度变化和工作温度。通过工作温度和电流密度揭示了SOFC性能的相反行为。

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