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A High-Speed Variation-Tolerant Interconnect Technique for Sub-Threshold Circuits Using Capacitive Boosting

机译:使用电容升压的亚阈值电路高速耐差互连技术

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This paper describes an interconnect technique for subthreshold circuits to improve global wire delay and reduce the delay variation due to process-voltage-temperature (PVT) fluctuations. By internally boosting the gate voltage of the driver transistors, operating region is shifted from subthreshold region to super-threshold region enhancing performance and improving tolerance to PVT variations. Simulations of a clock distribution network using the proposed driver shows a 66%–76% reduction in $3sigma$ clock skew value and 84%–88% reduction in clock tree delay compared to using conventional drivers. A 0.4-V test chip has been fabricated in a 0.18-$mu$m 6-metal CMOS process to demonstrate the effectiveness of the proposed scheme. Measurement results show 2.6 $times$ faster switching speed and 2.4$times$ less delay sensitivity under temperature variations.
机译:本文介绍了用于亚阈值电路的互连技术,以改善全局布线延迟并减少由于过程电压-温度(PVT)波动而引起的延迟变化。通过内部提升驱动晶体管的栅极电压,工作区域从亚阈值区域转移到了超阈值区域,从而提高了性能并提高了对PVT变化的容忍度。使用建议的驱动器对时钟分配网络进行的仿真显示,与使用传统驱动器相比,$ 3sigma $的时钟偏斜值减少了66%–76%,时钟树延迟减少了84%–88%。 0.4V测试芯片已在0.18μm的6金属CMOS工艺中制造,以证明所提出方案的有效性。测量结果表明,在温度变化的情况下,开关速度快2.6倍,延迟灵敏度降低2.4倍。

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