Analysis of Resistive-Open Defects in SRAM Sense Amplifiers

摘要

Figures 3 and 6 (are/contain) unreadable data. In this paper, we present an exhaustive analysis of resistive-open defects in sense amplifiers of static random access memory designed with a 65 nm technology. We show that some resistive-open defects may lead to a new type of dynamic behavior that has never been experienced in the past. It is modeled by dynamic two-cell incorrect read faults of two different types. Such fault models represent failures in the sense amplifier, which prevent it from performing any read operations (in case of type 1 ) or only a single type of read operation (in case of type 2). Results of electrical simulations are presented to provide a complete understanding of such a faulty behavior and possible March test solutions are proposed to detect all d2cIRFs.