机译:高感测和搜索速度的自转矩传递磁阻RAM和CAM / TCAM设计
Dept. of Electr., Comput., & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA;
CMOS memory circuits; MRAM devices; circuit simulation; content-addressable storage; magnetic tunnelling; spin systems; CMOS technology; TCAM cell structure; cell structure design; content addressable memory; magnetic tunneling junction; nonvolatile magnetoresistive memory; reliable sensing operation; search speed; size 0.18 mum; spin-torque transfer magnetoresistive RAM; ternary CAM; Content addressable memory (CAM); magnetic tunneling junction (MTJ); magnetoresistive random access memory (MRAM); spin-torque transfer (STT) magnetoresistive memory; ternary CAM (TCAM);
机译:使用自旋扭矩传输RAM(STT RAM)设计最后一级的片上缓存
机译:自旋扭矩传递磁性RAM超低压运行的容差传感电路
机译:利用内存技术中的优先级决定的高效TCAM搜索引擎设计
机译:高速,低匹配线电压摆幅和搜索线活动TCAM Cell阵列设计14 NM FinFET技术
机译:提高NAND闪存,相变RAM和自旋扭矩传输RAM的可靠性。
机译:基于压缩感知的低速相机声音提取高速成像方法
机译:自旋转移力矩磁阻内容可寻址存储器(Cam)单元结构设计具有增强的搜索噪声容限