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Three-Dimensional Chips Can Be Cool: Thermal Study of VeSFET-Based 3-D Chips

机译:三维芯片可能很酷:基于VeSFET的3-D芯片的热研究

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摘要

Thermal management becomes a huge challenge for modern IC designers, especially when chips go 3-D. Vertical slit field-effect transistor (VeSFET) technology provides an alternative thermal-friendly design choice. VeSFET-based chips not only have a much lower power density but also a better vertical thermal conductivity than their CMOS counterparts. For a VeSFET chip with ten stacked dies, the temperature increase is only 30% of that for CMOS-based chip. Assuming the same scaling trend for CMOS and VeSFET, VeSFET 3-D chips can postpone the appearance of dark silicon by three technology nodes compared with CMOS implementations. For VeSFET-based designs, different topologies of transistor arrays may result in different thermal behaviors. We perform thermal characterization of two-transistor array topologies.
机译:对于现代IC设计人员而言,热管理成为一项巨大的挑战,尤其是当芯片采用3D模式时。垂直缝隙场效应晶体管(VeSFET)技术提供了另一种热友好的设计选择。基于VeSFET的芯片不仅具有比CMOS同类产品低得多的功率密度,而且具有更好的垂直导热性。对于具有十个堆叠管芯的VeSFET芯片,温度升高仅是基于CMOS的芯片的30%。假设CMOS和VeSFET的缩放比例趋势相同,则与CMOS实现方案相比,VeSFET 3-D芯片可以通过三个技术节点来推迟深色硅的出现。对于基于VeSFET的设计,晶体管阵列的不同拓扑可能会导致不同的热行为。我们执行两晶体管阵列拓扑的热特性分析。

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