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Transimpedance Limit Exploration and Inductor-Less Bandwidth Extension for Designing Wideband Amplifiers

机译:设计宽带放大器的跨阻极限探索和无电感带宽扩展

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This brief studies the transimpedance of the regulated cascode (RGC) structure and develops a multilevel active feedback (MLAF) structure to build an inductorless CMOS differential transimpedance amplifier (TIA). The proposed TIA consists of an input stage, a single-to-differential circuit, a gain stage, and an output buffer. The input stage adopts the RGC structure of which transimpedance is theoretically characterized and numerically analyzed to determine design parameters. In the gain stage, the MLAF structure in a hierarchical feedback topology is investigated to increase the bandwidth without inductor peaking. The proposed differential TIA was simulated at the 180-, 90-, and 28-nm CMOS technologies to verify our design methodology. In addition, the TSMC 180-nm CMOS technology was employed to implement the proposed TIA with a core size of 0.05 mm, a bandwidth of 7.2 GHz, and a differential transimpedance gain of . Comparing with conventional TIAs, the proposed TIA exhibits the least hardware cost and fairly good performance for applications of 10-Gbit/s optical communications.
机译:本文简要研究了稳压共源共栅(RGC)结构的跨阻,并开发了多级有源反馈(MLAF)结构以构建无电感器CMOS差分跨阻放大器(TIA)。拟议的TIA由一个输入级,一个单对差分电路,一个增益级和一个输出缓冲器组成。输入级采用RGC结构,该结构的跨阻在理论上进行了表征并进行了数值分析,以确定设计参数。在增益阶段,研究了分层反馈拓扑中的MLAF结构,以增加带宽而不会出现电感峰值。拟议的差分TIA在180、90和28 nm CMOS技术上进行了仿真,以验证我们的设计方法。此外,采用了台积电180-nm CMOS技术来实现建议的TIA,其核心尺寸为0.05 mm,带宽为7.2 GHz,差分跨阻增益为。与传统的TIA相比,拟议的TIA在10 Gbit / s光通信应用中具有最低的硬件成本和相当好的性能。

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