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首页> 外文期刊>Very Large Scale Integration (VLSI) Systems, IEEE Transactions on >In Situ Error Detection Techniques in Ultralow Voltage Pipelines: Analysis and Optimizations
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In Situ Error Detection Techniques in Ultralow Voltage Pipelines: Analysis and Optimizations

机译:超低压管道的原位错误检测技术:分析与优化

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摘要

In order to achieve high tolerance against process, voltage, and temperature variations in the ultralow voltage (ULV) circuits, in situ error detection and correction (EDAC) techniques were presented. However, circuits adding the capability of error detection incur large hardware overhead, especially in ULV due to larger delay variability. In this paper, we analyze the hardware overhead of error detection techniques in pipelines based on three different sequential elements: flip-flops, two-phase latches, and pulsed latches. By exploiting the cycle-borrowing ability, we propose a technique called sparse insertion of error detecting registers on the two-phase latch-based and pulsed-latch-based pipelines to reduce the sequential logic area. Furthermore, we propose a delay-padding methodology using a multi-Vt cell library in ULV circuits to reduce EDAC hardware overhead. The proposed techniques are applied on a benchmark six-stage pipeline operating at 0.35 V in a 65-nm CMOS. The analysis results show that our proposed techniques can reduce the total area by 26%-33% and the error detecting register count by 2.9-4.3× compared with conventional EDAC techniques.
机译:为了在超低压(ULV)电路中实现对过程,电压和温度变化的高容限,提出了原位错误检测和校正(EDAC)技术。但是,添加了错误检测功能的电路会产生较大的硬件开销,特别是在ULV中,由于较大的延迟可变性。在本文中,我们基于三个不同的顺序元素(触发器,两相锁存器和脉冲锁存器)分析流水线中错误检测技术的硬件开销。通过利用循环借用能力,我们提出了一种在两相基于闩锁和基于脉冲闩锁的流水线上稀疏插入检错寄存器的技术,以减少顺序逻辑区域。此外,我们提出了一种在ULV电路中使用多Vt单元库的延迟填充方法,以减少EDAC硬件开销。拟议的技术应用于在65nm CMOS中以0.35 V工作的基准六级流水线。分析结果表明,与传统的EDAC技术相比,我们提出的技术可以将总面积减少26%-33%,将错误检测寄存器的数量减少2.9-4.3倍。

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