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首页> 外文期刊>Transactions of Nonferrous Metals Society of China >Effects of γ/γ interfacial structures on continuous coarsening of lamellar microstructure in TiAl alloy during aging
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Effects of γ/γ interfacial structures on continuous coarsening of lamellar microstructure in TiAl alloy during aging

机译:γ/γ界面结构对TiAl合金时效过程中层状组织连续粗化的影响

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摘要

The effects of γ/γ interfacial structures on continuous coarsening of the fully lamellar microstructure in Ti-48Al alloy aged at 1 150℃ were investigated by using transmission electron microscopy(TEM). Continuous lamellar coarsening can be achieved not only by migration of interface faults (such as ledges, edges and curved interfaces) but also by migration and decomposition of perfect γ/γ lamellar interfaces. Thermal grooves, initiative positions of interfacial dissociation, can frequently form at the triple point junctions between the 120℃-rotational ordered γ domain boundaries within γ lamellae and the lamellar interfaces. During the early stage of aging at 1 150℃, the interface migration and dissociation took place preferentially at the 120°-rotational ordered lamellar interfaces. Comparing the relative thermal stability of the true-twin, pseudo-twin and 120℃-rotational ordered γ/γ lamellar interfaces shows that the 120℃-rotational ordered lamellar interface is the most unstable. The reason of this phenomenon was analyzed through the comparisons of the interfacial energies and atomic arrangements of the three types of γ/γ lamellar interfaces.
机译:利用透射电子显微镜(TEM)研究了γ/γ界面结构对Ti-48Al合金在1 150℃时效的连续层状组织的连续粗化的影响。连续的层状粗化不仅可以通过界面断层(例如壁架,边缘和弯曲界面)的迁移来实现,而且可以通过完美的γ/γ层状界面的迁移和分解来实现。热槽是界面解离的主动位置,通常可以在γ层和层状界面内的120℃-旋转有序γ域边界之间的三点结处形成。在1 150℃时效的早期阶段,界面迁移和离解优先发生在120°旋转的有序层状界面上。比较真孪晶,假孪晶和120℃旋转有序γ/γ层状界面的相对热稳定性,发现120℃旋转有序层状界面是最不稳定的。通过比较三种类型的γ/γ层状界面的界面能和原子排列,分析了这种现象的原因。

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