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Interfacial Phenomena and Bond Strength in Joining AlN Ceramics Using Metals Foilst

机译:金属箔连接AlN陶瓷的界面现象和结合强度

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The solid state reaction between AlN ceramic and metals foils such as vanadium and titanium was studied between 1323 K and 1773 K for times ranging from 0.3 ks to 72 ks. Reaction couples consisting of AlN/Nb and AlN/Ni were also studied. Bonding was carried out in vacuum, in the shape of discs, maintained in contact under a pressure of 7.2 mPa. Titanium reacts with AlN at 1323 K by forming a thin nitride layer composed of TiN , beside which another reaction layer composed of Ti_3Al existed. The complete diffusion path was observed at 1473 K after 7.2 ks having a sequence of AlN / TiN / Ti_3AlN / Ti_3Al / Ti. The nitride layer grew slowly with bonding time, on the other hand, the Ti_3Al layer grew following Fick's law with an activation energy of 146 kJ/mol. A maximum bond strength of 128 MPa was obtained in a joint bonded at 1473 K after 28.8(Al) and V_2N controls the interface joining of the AlN/V joints. A complete diffusion path could be predi ks. The phase reaction in the AlN/V couples started at a temperature of 1573 K. Formation of Vcted before 0.9 ks at 1573 K, following a sequence of AlN / V(Al) / V_2N / V.A maximum bond strength could be obtained for a joint bonded at 1573 K after 5.4 ks having a structure of AlN/V(Al)/V_2N+V. No ternary compounds could be observed at the AlN/V joining interfaces. Joining AlN using Nb foils requires high temperature(1673 K or above). Nb_2Al, Nb_2N, and Nb_3Al_2N were observed at the interface between AlN and Nb. A complete diffusion path was established at 1673 K for 7.2 ks, having a sequence of AlN / Nb_3Al / Nb_3Al_2N /Nb_2N/Nb. Upon increasing the bonding ttemperature to 1773 K, cracks and voids which reduce the bond strength are usually found. A flat interface was observed in the AlN/Ni joints bonded at 1673 K after 21.6 ks, indicating no formation of compounds except for a trace of Al-Ni solid solution. The bond strength in AlN/Ni couples was poor.
机译:研究了AlN陶瓷与金属箔(例如钒和钛)之间的固态反应,反应时间为1323 K至1773 K,时间范围为0.3 ks至72 ks。还研究了由AlN / Nb和AlN / Ni组成的反应对。在真空下以圆盘状进行粘结,并在7.2 mPa的压力下保持接触。钛通过形成由TiN组成的薄氮化物层在1323 K下与AlN反应,此外存在另一由Ti_3Al组成的反应层。在7.2 ks后的1473 K处观察到了完整的扩散路径,具有AlN / TiN / Ti_3AlN / Ti_3Al / Ti序列。氮化物层随键合时间的增长而缓慢增长,另一方面,Ti_3Al层遵循菲克定律生长,活化能为146 kJ / mol。在28.8(Al)之后以1473 K粘结的接头中获得的最大粘结强度为128 MPa,并且V_2N控制AlN / V接头的界面连接。完整的扩散路径可能是优选的。 AlN / V对中的相反应始于1573 K的温度。按照AlN / V(Al)/ V_2N / VA的顺序,可以在1573 K的0.9 ks之前形成Vcted,从而获得最大的结合强度5.4 ks后在1573 K上键合,具有AlN / V(Al)/ V_2N + V结构。在AlN / V连接界面上未观察到三元化合物。使用Nb箔连接AlN需要高温(1673 K或更高)。在AlN和Nb之间的界面处观察到Nb_2Al,Nb_2N和Nb_3Al_2N。在1673 K处建立了7.2 ks的完整扩散路径,具有AlN / Nb_3Al / Nb_3Al_2N / Nb_2N / Nb的序列。在将粘合温度提高到1773 K时,通常会发现降低粘合强度的裂缝和空隙。 21.6 ks后在1673 K粘结的AlN / Ni接头中观察到平坦的界面,表明除了微量的Al-Ni固溶体外,没有形成化合物。 AlN / Ni对的结合强度很差。

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