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Microstructural Effect of Diamond-Like Carbon Thin Film on Micro-Tribological Properties

机译:类金刚石薄膜对微观摩擦性能的微观结构影响

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This paper describes the microstructural effect of Diamond-Like Carbon (DLC) thin film on micro-tribological properties. DLC thin films with density of 1.9-2.4 g/cm~3 were deposited on Silicon (111) surface by Plasma-Enhanced CVD method of the hot cathode PIG discharge type. The effect of deposition conditions on the microstructure of DLC thin film was evaluated by Raman spectros- copy. Increasing the bias voltage and the discharge current shifted the peak of the G-band shift toward high frequency and enlarged I(D)/I(G) ratio. Pin-on-Plate friction experiments were carried out using a diamond pin in high vacuum. The friction coefficients of DLC thin films indicated constant values during the friction. The friction coefficients increased with shifting G-band toward low frequency in the range above 1540 cm~(-1), but those did not vary with increasing I(D)/I(G). The friction coefficients were directly proportional to density of the film. Molecular orbital calculations revealed that the adhesion energy on the sp~3 bonding atom cluster was higher than that on the sp~2 bonding atom cluster.
机译:本文描述了类金刚石碳(DLC)薄膜对微摩擦学特性的微观结构影响。通过热阴极PIG放电型的等离子体增强CVD法在硅(111)表面上沉积密度为1.9-2.4g / cm〜3的DLC薄膜。通过拉曼光谱法评估了沉积条件对DLC薄膜微观结构的影响。偏置电压和放电电流的增加将G带的峰值移向高频,并增大了I(D)/ I(G)比。使用金刚石销在高真空下进行销对板的摩擦实验。 DLC薄膜的摩擦系数在摩擦期间表示恒定值。在1540 cm〜(-1)以上的范围内,摩擦系数随着G波段向低频移动而增加,但随着I(D)/ I(G)的增加而没有变化。摩擦系数与膜的密度成正比。分子轨道计算表明,在sp〜3键合原子团簇上的粘附能高于在sp〜2键合原子团簇上的粘附能。

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