構造制御形研磨パッドによる高能率仕上げ加エ：工作物と研磨パッド間の接触状慴の改善

摘要

半導体分野においてシリコンウェーハの薄厚化やrnLow-k材料の使用が進められており，仕上げ加工におrnいては低圧力研磨加工の実現が求められている．またrn高硬度な材料である単結晶SiCやサファイアを用いたrn基板への移行も検討されており，ここでは高圧力下でrnの研磨加工が試みられている．このように近年では従rn来の加工条件とは異なり，低圧・高圧など幅広い領域rnへの適用が必要とされている．%In loose-abrasive machining, a new polishing technique is required to be developed in order to finish a fragile workpiece such as thin silicon wafer or Low k material and a hard material such as single-crystal SiC or sapphire. Namely, it is very difficult that high finishing efficiency is obtained in the above finishing using the conventional polishing technique. Then this paper deals with the achievement of high efficient finishing by using a structure-controlled polishing pad, which consists of a soft layer and a hard layer. The structure is thought to make the contact area between pad and workpiece expand with high polishing pressure. So it is expected to increase the number of the effective abrasives and the removal volume by a single abrasive. As a result of introducing it for finishing optical glass, high efficient finishing with lower load on workpiece was achieved, as compared with the conventional pads.