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Electrical and optical properties of highly oriented nanocrystalline vanadium pentoxide

机译:高取向纳米晶五氧化二钒的电学和光学性质

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摘要

Highly oriented nanocrystalline hydrated vanadium pentoxide, V_2O_5.nH_2O, were grown epitaxially on a glass substrate along the c-axis to form a film of 200 nm thick. The films were prepared by dissolving V_2O_5 powder in hydrogen peroxide, H_2O_2, solution. X-ray diffraction, transmission electron micrograph and electron diffraction were used to identify the structure of the obtained nanocrystals. Homogenous nanocrystals of 7.0 ± 1.0 nm in size were obtained and were closed packed and are distributed evenly. Electrical conductivity and thermoelectric power were measured in the temperature range 300-480 K for the as prepared films parallel to the substrate surface; i.e. normal to the c-axis. The obtained results showed an n-type semiconducting behavior within the whole temperature range. It is also clear to see that a reversible abnormality at about 340 K is realized during the cooling electrical conductivity measurements. On the other hand, optical transmission and reflection were used to evaluate different optical parameters such as; optical band gap, nature of donor levels and different absorption bands parameters. Both the electrical and optical data are correlated and accordingly the conduction mechanism is verified. Electronic parameters such as effective mass, carriers' type and concentration and drift mobility were evaluated.
机译:在玻璃基板上沿c轴外延生长高度取向的纳米晶水合五氧化二钒V_2O_5.nH_2O,以形成200 nm厚的膜。通过将V_2O_5粉末溶于过氧化氢H_2O_2溶液中来制备薄膜。使用X射线衍射,透射电子显微照片和电子衍射来鉴定获得的纳米晶体的结构。获得尺寸为7.0±1.0nm的均质纳米晶体,并将其密堆积并均匀分布。在300-480K的温度范围内,对所制备的平行于基材表面的膜测量电导率和热电功率;即垂直于c轴。所获得的结果显示出在整个温度范围内的n型半导体行为。还清楚地看到,在冷却电导率测量期间在约340 K处实现了可逆异常。另一方面,使用光学透射和反射来评估不同的光学参数,例如;光学带隙,供体能级的性质以及不同的吸收带参数。电气和光学数据都相关,因此可以验证传导机理。评估了诸如有效质量,载流子类型和浓度以及漂移迁移率等电子参数。

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