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Hysteresis behaviour of reactive high power impulse magnetron sputtering

机译:无功大功率脉冲磁控溅射的磁滞行为

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Hysteresis behaviour during reactive High Power Impulse Magnetron Sputtering (HIPIMS) has been investigated in detail. Such analysis has been made possible by the recently developed plasma emission monitoring based reactive HIPIMS monitoring and control technology. Hysteresis curves were recorded at frequencies of 300,450 and 600 Hz at an average power of 3.0 kW during reactive HIPIMS of Ti in Ar/O_2 atmosphere. It is shown that the target pulsing parameters, such as frequency, pulse voltage, and duty cycle do affect the overall shape of the hysteresis loop. Analysis of the hysteresis behaviour at different target pulsing parameters reveals how different regions of the hysteresis loop are affected by different pulsing parameters. The outcomes of this work demonstrate trends and explain relationships between the pulsing parameters and the hysteresis behaviour. Although the overall picture is rather complicated, it is quite clear that the hysteresis effect is induced by the same processes as in direct current magnetron sputtering, while the influence of the reactive ion implantation oxidation mechanism appears to be far more significant in reactive HIPIMS.
机译:已对无功大功率脉冲磁控溅射(HIPIMS)期间的磁滞行为进行了详细研究。通过最近开发的基于等离子发射监视的反应性HIPIMS监视和控制技术,使这种分析成为可能。在Ar / O_2气氛中进行Ti的反应性HIPIMS期间,以300,450和600 Hz的频率记录的磁滞曲线,平均功率为3.0 kW。结果表明,目标脉冲参数(例如频率,脉冲电压和占空比)确实会影响磁滞环路的整体形状。对不同目标脉冲参数下的磁滞行为的分析揭示了磁滞回路的不同区域如何受到不同脉冲参数的影响。这项工作的结果表明了趋势,并解释了脉冲参数与磁滞行为之间的关系。尽管总体情况相当复杂,但很明显,磁滞效应是通过与直流磁控溅射中相同的过程引起的,而反应性离子注入氧化机理的影响在反应性HIPIMS中似乎更为重要。

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