Fabrication of CuInSe_2 thin film solar cell with selenization of double layered precursors from Cu_2Se and In_2Se_3 binary

摘要

CuInSe_2 (CIS) films on Mo/soda-lime glass were prepared by selenization of sputtered precursors from Cu_2Se and In_2Se_3 binary targets. Cu-In-Se precursors were sequentially sputtered with double-layered structure of both Cu_2Se/In_2Se_3 and In_2Se_3/Cu_2Se. The structural, compositional and electrical properties of annealed Cu-In-Se precursors were investigated for solar cell applications. Better adhesion between CIS and Mo back contact was observed in the double-layered structure of Cu_2Se/In_2Se_3 at all working pressures. Less MoSe2 phase on both structures was generated at a lower working pressure of 0.67 Pa. A CIS solar cell with Al/Al-doped ZnO/i-ZnO/ CdS/CIS (900 nm, Cu_2Se/In_2Se_3 at 0.67 Pa)/Mo/soda-lime glass was continuously fabricated, and its conversion efficiency was 4.6%, with 346 mV of open circuit voltage, 30.5 mA/cm~2 of short circuit current density and 43.5% fill factor.