首页> 外国专利> THIN-FILM SOLAR FABRICATION PROCESS, DEPOSITION METHOD FOR SOLAR CELL PRECURSOR LAYER STACK, AND SOLAR CELL PRECURSOR LAYER STACK

THIN-FILM SOLAR FABRICATION PROCESS, DEPOSITION METHOD FOR SOLAR CELL PRECURSOR LAYER STACK, AND SOLAR CELL PRECURSOR LAYER STACK

机译:薄膜太阳能制造工艺,太阳能电池前体层的沉积方法和太阳能电池前体层

摘要

A method of manufacturing a layer stack adapted for a thin-film solar cell is and a precursor for a solar cell are described. The method includes depositing a TCO layer over a transparent substrate, depositing a first conductive-type layer a first p-i-n junction configured for the solar cell, depositing a first intrinsic-type layer of a first p-i-n junction configured for the solar cell and depositing a further conductive-layer with a conductivity opposite to the first conductive-type layer first p-i-n junction configured for the solar cell. The method further includes providing for a SiOx-containing intermediate layer by chemical vapor deposition and depositing a second p-i-n junction configured for the solar cell, wherein the SiOx-containing intermediate layer is provided within the a further conductive-type layer, and wherein the SiOx-containing layer has a thickness of 17 nm or less.
机译:描述了一种制造适用于薄膜太阳能电池的层堆叠的方法以及太阳能电池的前体。该方法包括在透明基板上沉积TCO层,在第一导电型层上沉积用于太阳能电池的第一pin结,在第一pin型结层上沉积用于太阳能电池的第一本征型层以及沉积另外的TCO层。导电层,其导电性与为太阳能电池配置的第一导电类型层的第一pin结相反。该方法还包括通过化学气相沉积来提供含SiO x的中间层,并沉积用于太阳能电池的第二pin结,其中该含SiO x的中间层设置在另一导电型层内,并且其中SiO x含涂层的厚度为17nm或更小。

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