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Parameter-controllable microchannel reactor for enhanced deposition of copper sulfide thin films

机译:可控参数的微通道反应器,用于增强硫化铜薄膜的沉积

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摘要

A microchannel reactor was designed and fabricated based on the unique fluid-flow and mass transfer characteristics in a closely parallel channel for the deposition of copper sulfide (CuxS) thin films. The configuration of the microchannel allows the flow pattern to be confined uniformly across the channel width and length, thereby resulting in a uniform deposited thin film covering the whole surface of the substrate. A parametric study of the deposition of CuxS thin films was performed, including the effects of deposition time (2-10 min), flow rate (2-6 ml/min) and reaction temperature (60-80 degrees C). It was observed that the basic characteristics of CuxS films, such as morphology, film thickness, film composition and optical band gap, were highly affected by all deposition parameters. We were able to attain smooth, dense and adherent CuxS film with homogeneous grains at a high growth rate of 1.8 mu m/h, by optimizing the controllable parameters. The optimized condition was at temperature of 80 degrees C, flow rate of 6 ml/min and deposition time of 4 min. The results showed that the film formation by heterogeneous nucleation and growth on the substrate is promoted over homogeneous reaction in the solution phase, which is strongly due to the incorporation of the optimal channel design in a micro-scale structure together with the controlled deposition parameters. This method can overcome the issue of the deposition in limited area and can be scaled for large-area substrates with good uniformity of CuxS films.
机译:基于在紧密平行的通道中独特的流体流动和传质特性,设计和制造了微通道反应器,用于沉积硫化铜(CuxS)薄膜。微通道的构造允许在通道的宽度和长度上均匀地限制流动模式,从而得到覆盖基底整个表面的均匀沉积的薄膜。对CuxS薄膜的沉积进行了参数研究,包括沉积时间(2-10分钟),流速(2-6 ml / min)和反应温度(60-80摄氏度)的影响。观察到,CuxS膜的基本特征,如形态,膜厚,膜组成和光学带隙,都受到所有沉积参数的强烈影响。通过优化可控参数,我们能够以1.8微米/小时的高生长速率获得具有均匀晶粒的光滑,致密和附着的CuxS膜。最适条件为温度80℃,流速6 ml / min,沉积时间4 min。结果表明,在溶液相中,通过异质成核和生长在基底上的膜形成促进了均相反应,这在很大程度上是由于在微观结构中结合了最佳的通道设计以及受控的沉积参数所致。该方法可以克服在有限区域内沉积的问题,并且可以缩放到具有良好CuxS膜均匀性的大面积基板。

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