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首页> 外文期刊>Revue roumaine de chimie >ELECTRONIC AND OPTICAL PROPERTIES OF TiS_2 DETERMINED FROM MODIFIED BECKE-JOHNSON GGA POTENTIAL (mBJ-GGA) STUDY
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ELECTRONIC AND OPTICAL PROPERTIES OF TiS_2 DETERMINED FROM MODIFIED BECKE-JOHNSON GGA POTENTIAL (mBJ-GGA) STUDY

机译:改性贝克克-约翰逊GGA势(mBJ-GGA)研究确定的TiS_2的电子和光学性质

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In this study, we report the results of electronic structure and optical properties of TiS_2 calculations within the density functional theory (DFT) using the generalized gradient approximation (GGA) and an improved version of the modified Becke-Johnson (mBJ) exchange-correlation potential. The equilibrium lattice parameters and bulk modulus were found to be close to the experimentally reported results and a semi-conducting character of the material was revealed from the band structure calculation with an indirect band gap of 0.26 eV. Furthermore, DOS plots showed a prominent contribution of Ti-d, S-s and S-p. We have also calculated the dielectric function, refractive index and optical reflectivity and we have compared the obtained curves to those found experimentally by other authors.
机译:在这项研究中,我们报告了使用广义梯度近似(GGA)和改进的Becke-Johnson(mBJ)交换相关势的改进版本在密度泛函理论(DFT)中进行TiS_2计算的电子结构和光学性质的结果。发现平衡晶格参数和体积模量接近于实验报道的结果,并且通过0.26eV的间接带隙的能带结构计算揭示了材料的半导体特性。此外,DOS图显示了Ti-d,S-s和S-p的显着贡献。我们还计算了介电函数,折射率和光反射率,并将获得的曲线与其他作者的实验结果进行了比较。

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