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首页> 外文期刊>Terahertz Science and Technology, IEEE Transactions on >Waveguide-to-Substrate Transition Based on Unilateral Substrateless Finline Structure: Design, Fabrication, and Characterization
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Waveguide-to-Substrate Transition Based on Unilateral Substrateless Finline Structure: Design, Fabrication, and Characterization

机译:基于单侧薄型圆线结构的波导到基板过渡:设计,制造和表征

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摘要

We report on a novel waveguide-to-substrate transition with prospective use for broadband mixer design. The transition employs a substrateless finline, i.e., a unilateral finline structure with the substrate removed between the fins. This distinctive feature diminishes the overall insertion loss and facilitates matching with the waveguide. The transition is designed on a thin silicon substrate covered by a superconducting niobium thin layer. An auxiliary Au layer situated on top of the Nb layer provides grounding for the fins and facilitates the mounting process in the split-block waveguide mount. Aiming to compare simulations with measurements, a back-to-back transition arrangement for the 211-373 GHz frequency band was designed, fabricated, and characterized at cryogenic temperatures. The simulation results for the back-to-back structure show an insertion loss of less than 0.6 dB in the whole band, i.e., 0.3 dB per transition. Furthermore, a remarkable fractional bandwidth of 55% with a return loss better than 15 dB is predicted. Experimental verification shows consistent results with simulations.
机译:我们报告了一种新型波导与基板过渡,具有宽带搅拌机设计的前瞻性用途。过渡采用一个无亚线圆线,即单侧芬林结构,其中基材在翅片之间移除。这种独特的特征减少了整体插入损耗并有助于与波导匹配。过渡设计在由超导铌薄层覆盖的薄硅衬底上。位于Nb层顶部的辅助AU层提供用于翅片的接地,并便于在分流块波导安装件中的安装过程。旨在通过测量进行比较模拟,在低温温度下设计,制造和表征211-373GHz频带的背对背转换布置。背对背结构的仿真结果显示整个频段中少于0.6dB的插入损耗,即每转换0.3 dB。此外,预测了比15dB优于15dB的返回损耗的显着分数带宽。实验验证显示了一致的仿真结果。

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