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MILLIMETER EPR SPECTROMETER FOR STUDYING THE HIGH-CONDUCTIVITY SAMPLES

机译:毫米波EPR谱仪,用于研究高电导率样品

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摘要

The zero-gap semimagnetic semiconductors with the resonant donor level and mixed-valence are of fundamental and applied interest. The high mobility of band electrons in them allows one to use almost the entire arsenal of modern methods and means for studying the physical properties of solids. One of the effective methods of studying the magnetoresonance properties of such semiconductors is the electron paramagnetic-resonance method. However, due to the high conductivity of semiconductors like those, the sensitivity of applied spectrometers should be increased. For the most part the sensitivity is determined by the electromagnetic properties oj the resonance cell being used. The problem becomes more difficult for investigations in the mm wavelength short-wave region where the skin depth is of a few microns only. In order to extent the operating temperature range the functional parts of the electron paramagnetic resonance spectrometer were modified. Also, an original resonant cell in the form of two-mirror open resonator for recording the absorption spectra of various substances in the mm wavelength short-wave region within the temperature limits T = 1.7...300 K was developed. The electron paramagnetic resonance spectra for the zero-gap semimagnetic semiconductor HgSe:Fe measured at a frequency of 123 GHz are shown. These spectra illustrate the advantages of the proposed resonant cell in the spectrometer structure for investigations of the high-frequency magnetic-resonance properties of high-conductivity materials.
机译:具有共振施主能级和混合价的零间隙半磁性半导体具有基本的和实用的意义。带电子在其中的高迁移率使人们几乎可以使用现代方法和手段研究固体的全部物理性能的全部工具。研究此类半导体的磁谐振特性的有效方法之一是电子顺磁共振方法。但是,由于像这样的半导体的高电导率,应提高所应用光谱仪的灵敏度。在大多数情况下,灵敏度取决于所用谐振单元的电磁特性。对于在趋肤深度仅为几微米的毫米波长短波区域中进行研究,该问题变得更加困难。为了扩展工作温度范围,对电子顺磁共振光谱仪的功能部件进行了修改。此外,还开发了一种双镜开放谐振器形式的原始谐振单元,用于记录温度极限T = 1.7 ... 300 K内毫米波长短波区域中各种物质的吸收光谱。显示了在123 GHz频率下测得的零间隙半磁半导体HgSe:Fe的电子顺磁共振光谱。这些光谱说明了在光谱仪结构中建议的谐振单元在研究高电导率材料的高频磁共振特性方面的优势。

著录项

  • 来源
    《Telecommunications and Radio Engineering》 |2014年第9期|841-849|共9页
  • 作者单位

    A.Ya. Usikov Institute for Radiophysics and Electronics of the National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkiv 61085, Ukraine;

    A.Ya. Usikov Institute for Radiophysics and Electronics of the National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkiv 61085, Ukraine;

    Institute of High-Energy Physics and Nuclear Physics of NSC KIPT 1 ,Akademicheskaya St. 61108 Kharkiv, Ukraine;

    A.Ya. Usikov Institute for Radiophysics and Electronics of the National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkiv 61085, Ukraine;

  • 收录信息 美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    spectrometer; resonant cell; electromagnetic field distribution; semiconductor; absorption spectrum;

    机译:光谱仪共振电池电磁场分布半导体;吸收光谱;

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