Impact of Local High-k Insulator on the Drivability of Gate-All-Around SOI MOSFET

摘要

This paper studies the impact of local high-k gate insulator on the drivability and off-current of gate-all-around (GAA) silicon-on-insulator (SOI) MOSFET. Replacement of a part of the gate insulator (SiO_2) with a high-k insulator (HfO_2) improves the drivability of GAA MOSFET, which stems from the lateral extension of high gate-induced potential. Simulation results suggest the optimal length of high-k insulator in order to realize the best performance. In addition, simulation results reveal that the parasitic resistance of the low-doped diffusion region of source diffusion is drastically reduced by the lateral extension of gate-induced potential.