Study on Transport Properties of Bi₂Se₃ Single Crystals Grown by Vapor Phase Technique

摘要

Single crystals of Bi₂Se₃ were grown by vapor phase technique using ammonium chloride (NH₄Cl) as a transporting agent. The stoichiometry of the as-grown Bi₂Se₃ crystal was confirmed by energy-dispersive analysis of X-ray. The lattice parameters, crystallite size, and stacking fault probabilities were determined from X-ray powder diffractogram. The surface morphology of the as-grown single crystals was studied using AFM image. The Seebeck coefficient and resistivity variation from low (6? K) to near ambient temperature on these as-grown Bi₂Se₃ single crystals was measured. The Hall effect measurements were carried out at three different low temperatures. The obtained results are discussed in detail.View full textDownload full textKeywordsBi2Se3 , electrical properties, single crystal, vapor phase techniqueRelated var addthis_config = { ui_cobrand: "Taylor & Francis Online", services_compact: "citeulike,netvibes,twitter,technorati,delicious,linkedin,facebook,stumbleupon,digg,google,more", pubid: "ra-4dff56cd6bb1830b" }; Add to shortlist Link Permalink http://dx.doi.org/10.1080/15533174.2012.682683