FABRICATION OF ULTRA-LARGE SCALE INTEGRATED BY ELECTROLESS NEUTRAL COPPER PLATING

摘要

Copper promises to replace aluminum in ULSI metallization thanks to its better conductivity and reliabilty, ULSI metallization is formed by electroless neutral copper plating using cobalt (II) compound as a reducing agent. Results show good storage stability ,and trenches/holes on silicon wafers are filled by copper deposits. Hydrogen gas did not evolved in the plating reaction, and not effect from alkaline metal ions was seen. This process may thus be applied to ULSI matallization, using electroless neutral plating with cobalt (II) compound as a reducing agent.