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Metal-insulator-metal sensors monitoring charge flow during thermal desorption

机译:金属-绝缘体-金属传感器监控热脱附过程中的电荷流

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Metal-insulator-metal sensors with a new design have been developed which allow us to perform thermal desorption spectroscopy of weakly bound adsorbates. The sensor can be temperature ramped utilising an ITO layer which is electrically isolated from the two metal layers such that a sensitive measurement of the device current is not hampered. An accurate reading of the temperature of the metal surface is derived from the I-V curve of the sensor which is found to be temperature sensitive. Concurrently with the thermal desorption spectrum the device current is recorded allowing us to correlate the latter with distinct desorption processes. For the molecules, H2O, small alcohols, NH3and HCOOH we obtain thermal desorption spectra. Concurrently with recoding the spectra we detect characteristic device currents. These are found to solely result from interactions between the substrate and the first monolayer of molecules. We suggest that these are due to shifts of the Fermi level of the top metal film in the MIM device induced by the charge transfer processes connected with molecular adsorption and desorption.
机译:已开发出具有新设计的金属-绝缘体-金属传感器,使我们能够对弱结合的吸附物进行热解吸光谱。可以利用与两个金属层电隔离的ITO层使传感器温度升高,从而不会影响对器件电流的灵敏测量。根据对温度敏感的传感器的I-V曲线可以得出金属表面温度的准确读数。与热解吸光谱同时,记录了器件电流,使我们能够将后者与独特的解吸过程相关联。对于分子,H 2 O,小醇,NH 3和HCOOH,我们获得了热解吸光谱。在重新编码光谱的同时,我们检测到特征器件电流。发现这些完全是由底物和第一分子单分子之间的相互作用引起的。我们认为,这是由于与分子吸附和解吸有关的电荷转移过程引起的MIM器件中顶层金属膜的费米能级的变化。

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